Record Citations
APA (7th ed.) Citation
Yu, H. (2010). Metal Gate Electrode and High-Dielectrics for Sub-32nm Bulk CMOS Technology: Integrating Lanthanum Oxide Capping Layer for Low Threshold-Voltage Devices Application. IntechOpen. https://doi.org/10.5772/6879
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Chicago Style (17th ed.) Citation
Yu, HongYu. Metal Gate Electrode and High-Dielectrics for Sub-32nm Bulk CMOS Technology: Integrating Lanthanum Oxide Capping Layer for Low Threshold-Voltage Devices Application. IntechOpen, 2010. https://doi.org/10.5772/6879.
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MLA (9th ed.) Citation
Yu, HongYu. Metal Gate Electrode and High-Dielectrics for Sub-32nm Bulk CMOS Technology: Integrating Lanthanum Oxide Capping Layer for Low Threshold-Voltage Devices Application. IntechOpen, 2010. https://doi.org/10.5772/6879.
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Warning: These citations may not always be 100% accurate.