Registro de Citas

Cita APA (7a ed.)
Huang, A. P., Yang, Z. C., & Chu, P. K. (2010). Hafnium-based High-k Gate Dielectrics. IntechOpen. https://doi.org/10.5772/8631
Cita Chicago Style (17a ed.)
Huang, A. P., Z. C. Yang, y Paul K. Chu. Hafnium-based High-k Gate Dielectrics. IntechOpen, 2010. https://doi.org/10.5772/8631.
Cita MLA (9a ed.)
Huang, A. P., et al. Hafnium-based High-k Gate Dielectrics. IntechOpen, 2010. https://doi.org/10.5772/8631.
Precaución: Estas citas no son 100% exactas.