Numerical Simulation and Physics-Based Modelling of Ph-BTBT-C10-Based Organic Thin Film Transistor
<p id="p1">Organic thin film transistors (OTFTs) are an important aspect in the development of low-cost, large-area, and flexible ICs, underscoring the necessity for precise modelling and understanding of device physics. A finite element method (FEM)-based numerical device simulation of OTFTs is pre...
Guardado en:
| Autores principales: | , , |
|---|---|
| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2025
|
| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/1202113 |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | <p id="p1">Organic thin film transistors (OTFTs) are an important aspect in the development of low-cost, large-area, and flexible ICs, underscoring the necessity for precise modelling and understanding of device physics. A finite element method (FEM)-based numerical device simulation of OTFTs is presented in this chapter using Ph-BTBT-C10 as the semiconductor. This model includes field-dependent mobility and a double-peak density of states. This model extends existing theories by integrating temperature-dependent band gap narrowing with the carrier concentration effects caused by heavy doping. It is more accurate in predicting the band gap under different thermal conditions and doping concentrations, which is essential for fabricating advanced semiconductor devices. For charge-carrier movements, hopping mobility describes the transport of charge through localised states in semiconductors influenced by thermal excitations but Poole-Frenkel mobility describes a field-induced charge movement, particularly at high electric fields. In Ph-BTBT-C10 semiconductors, both types are important for understanding charge dynamics, conductivity and carrier transport mechanisms. Experimental confirmation compared to theoretical models is useful to understand high-field charge dynamics, which in turn is necessary for optimising the design and performance of semiconductor devices.</p> |
|---|---|
| ISBN: | 978-1-83634-083-6 |
| DOI: | 10.5772/intechopen.1009904 |