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Cita APA (7a ed.)
Nussupov, K. K., & Beisenkhanov, N. B. (2011). The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si. IntechOpen. https://doi.org/10.5772/22256
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Cita Chicago Style (17a ed.)
Nussupov, Kair Kh., y Nurzhan B. Beisenkhanov. The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si. IntechOpen, 2011. https://doi.org/10.5772/22256.
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Cita MLA (9a ed.)
Nussupov, Kair Kh., y Nurzhan B. Beisenkhanov. The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si. IntechOpen, 2011. https://doi.org/10.5772/22256.
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