High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method
None
Guardado en:
| Autores principales: | , |
|---|---|
| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2012
|
| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/26206 |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares: High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method
- Effect of Cavity Length and Operating Parameters on the Optical Performance of Al0.08In0.08Ga0.84N/ Al0.1In0.01Ga0.89N MQW Laser Diodes
- FixDrive: Automatically Repairing Autonomous Vehicle Driving Behaviour for $0.08 per Violation
- Electron Transport Properties of Gate-Defined GaAs/AlxGa1-xAs Quantum Dot
- A 0.13um CMOS 6-9GHz 9-Bands Double-Carrier OFDM Transceiver for Ultra Wideband Applications
- Accelerating HQC for Post-Quantum TLS 1.3 on x86 IoT Gateways
- Solving $X^{q+1}+X+a=0$ over Finite Fields