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Cita APA (7a ed.)
Chen, K., Cheng, C., Wu, S., Liao, C., & Tsai, J. (2012). The Influence of Vanadium Doping on the Physical and Electrical Properties of Non-Volatile Random Access Memory Using the BTV, BLTV, and BNTV Oxide Thin Films. IntechOpen. https://doi.org/10.5772/52203
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Cita Chicago Style (17a ed.)
Chen, Kai-Huang, Chien-Min Cheng, Sean Wu, Chin-Hsiung Liao, y Jen-Hwan Tsai. The Influence of Vanadium Doping on the Physical and Electrical Properties of Non-Volatile Random Access Memory Using the BTV, BLTV, and BNTV Oxide Thin Films. IntechOpen, 2012. https://doi.org/10.5772/52203.
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Cita MLA (9a ed.)
Chen, Kai-Huang, et al. The Influence of Vanadium Doping on the Physical and Electrical Properties of Non-Volatile Random Access Memory Using the BTV, BLTV, and BNTV Oxide Thin Films. IntechOpen, 2012. https://doi.org/10.5772/52203.
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