The Influence of Vanadium Doping on the Physical and Electrical Properties of Non-Volatile Random Access Memory Using the BTV, BLTV, and BNTV Oxide Thin Films

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Bibliographic Details
Main Authors: Chen, Kai-Huang, Cheng, Chien-Min, Wu, Sean, Liao, Chin-Hsiung, Tsai, Jen-Hwan
Format: Book Chapter
Language:English
Published: IntechOpen 2012
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Online Access:https://www.intechopen.com/chapters/40446
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