Electronic Transport in Few-Layer Black Phosphorus
Subjected to an adequately high magnetic field, Landau levels (LLs) form to alter the electronic transport behavior of a semiconductor. Especially in two-dimensional (2D) limit, quantum Hall effect sheds light on a variety of intrinsic properties of 2D electronic systems. With the raising quality of...
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| Main Authors: | , , , |
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| Format: | Book Chapter |
| Language: | English |
| Published: |
IntechOpen
2020
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| Subjects: | |
| Online Access: | https://www.intechopen.com/chapters/69106 |
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| Summary: | Subjected to an adequately high magnetic field, Landau levels (LLs) form to alter the electronic transport behavior of a semiconductor. Especially in two-dimensional (2D) limit, quantum Hall effect sheds light on a variety of intrinsic properties of 2D electronic systems. With the raising quality of field effect transistors (FET) based on few-layer black phosphorus (BP), electronic transport in quantum limit (quantum transport) has been extensively studied in literatures. This chapter investigates the electronic transport in few-layer BP, especially in quantum limit. At the beginning of this chapter, a brief introduction to the background of LL, edge state, and quantum Hall effect will be delivered. We then examine the fabrication of high-quality FET based on BP and their electronic performances followed by exploring the magnetoresistances of these high-quality devices which reveal Shubnikov-de Haas (SdH) oscillations and quantum Hall effect in BP. Intrinsic parameters like effective mass, Landé g-factor, and so on are discussed based on quantum transport. |
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| ISBN: | 978-1-83880-337-7 |
| DOI: | 10.5772/intechopen.89149 |