Growth Kinetics of Thin Film Epitaxy
This chapter mainly introduces five basic stages of the film deposition process (vapor adsorption, surface diffusion, reaction between adsorbed species, reaction of film materials to form bonding surface, and nucleation and microstructure formation), analyzes the influence of deposition process para...
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2020
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| Acceso en línea: | https://www.intechopen.com/chapters/71034 |
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| _version_ | 1879164727330865152 |
|---|---|
| author | Liu, Hong |
| author_browse | Liu, Hong |
| author_facet | Liu, Hong |
| author_sort | Liu, Hong |
| building | IntechOpen |
| collection | Acceso abierto |
| description | This chapter mainly introduces five basic stages of the film deposition process (vapor adsorption, surface diffusion, reaction between adsorbed species, reaction of film materials to form bonding surface, and nucleation and microstructure formation), analyzes the influence of deposition process parameters on the three basic growth modes of the film, focuses on the relationship between the control parameters of homoepitaxy and heteroepitaxy and the film structure, gives the dynamic characteristics of each growth stage, and examines the factors determining epitaxy film structure, topography, interfacial properties, and stress. It is shown that two-dimensional nucleation is a key to obtain high-quality epitaxial films. |
| doi_str_mv | 10.5772/intechopen.91224 |
| first_indexed | 2026-10-15T21:38:56Z |
| format | Book Chapter |
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<dc:title>Growth Kinetics of Thin Film Epitaxy</dc:title>
<dc:creator>Hong Liu</dc:creator>
<dc:subject>Physical Sciences, Engineering and Technology</dc:subject>
<dc:description>This chapter mainly introduces five basic stages of the film deposition process (vapor adsorption, surface diffusion, reaction between adsorbed species, reaction of film materials to form bonding surface, and nucleation and microstructure formation), analyzes the influence of deposition process parameters on the three basic growth modes of the film, focuses on the relationship between the control parameters of homoepitaxy and heteroepitaxy and the film structure, gives the dynamic characteristics of each growth stage, and examines the factors determining epitaxy film structure, topography, interfacial properties, and stress. It is shown that two-dimensional nucleation is a key to obtain high-quality epitaxial films.</dc:description>
<dc:publisher>IntechOpen</dc:publisher>
<dc:date>2020-10-02</dc:date>
<dc:type>Chapter, Part Of Book</dc:type>
<dc:identifier>https://www.intechopen.com/chapters/71034</dc:identifier>
<dc:identifier>doi:10.5772/intechopen.91224</dc:identifier>
<dc:language>en</dc:language>
<dc:relation>ISBN:978-1-78985-199-1</dc:relation>
<dc:rights>https://creativecommons.org/licenses/by/3.0/</dc:rights>
<dc:source>https://www.intechopen.com/books/10061 ; 21st Century Surface Science - a Handbook</dc:source>
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| id | intech-71034 |
| institution | IntechOpen |
| isbn | 978-1-78985-199-1 |
| language | English |
| last_indexed | 2026-10-15T21:38:56Z |
| publishDate | 2020 |
| publishDateRange | 2020 |
| publishDateSort | 2020 |
| publisher | IntechOpen |
| publisherStr | IntechOpen |
| record_format | oai_dc |
| spelling | intech-710342020-10-02 Growth Kinetics of Thin Film Epitaxy Hong Liu Physical Sciences, Engineering and Technology This chapter mainly introduces five basic stages of the film deposition process (vapor adsorption, surface diffusion, reaction between adsorbed species, reaction of film materials to form bonding surface, and nucleation and microstructure formation), analyzes the influence of deposition process parameters on the three basic growth modes of the film, focuses on the relationship between the control parameters of homoepitaxy and heteroepitaxy and the film structure, gives the dynamic characteristics of each growth stage, and examines the factors determining epitaxy film structure, topography, interfacial properties, and stress. It is shown that two-dimensional nucleation is a key to obtain high-quality epitaxial films. IntechOpen 2020-10-02 Chapter, Part Of Book https://www.intechopen.com/chapters/71034 doi:10.5772/intechopen.91224 en ISBN:978-1-78985-199-1 https://creativecommons.org/licenses/by/3.0/ https://www.intechopen.com/books/10061 ; 21st Century Surface Science - a Handbook |
| spellingShingle | Physical Sciences, Engineering and Technology Liu, Hong Growth Kinetics of Thin Film Epitaxy |
| title | Growth Kinetics of Thin Film Epitaxy |
| title_full | Growth Kinetics of Thin Film Epitaxy |
| title_fullStr | Growth Kinetics of Thin Film Epitaxy |
| title_full_unstemmed | Growth Kinetics of Thin Film Epitaxy |
| title_short | Growth Kinetics of Thin Film Epitaxy |
| title_sort | growth kinetics of thin film epitaxy |
| topic | Physical Sciences, Engineering and Technology |
| url | https://www.intechopen.com/chapters/71034 |
| work_keys_str_mv | AT liuhong growthkineticsofthinfilmepitaxy |