Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface

The scope of this chapter is to introduce a highly efficient HfO2 atomic layer deposition (ALD) process with superior interface defect characteristics that can be applied on high-mobility III-V substrates. For a long time, the major academic research of III-V metal-oxide-semiconductor (MOS) studies...

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Autores principales:	Eom, Sukeun, Kong, Min-woo, Seo, Kwang-seok
Formato:	Capítulo de libro
Lenguaje:	inglés
Publicado:	IntechOpen 2020
Materias:	Physical Sciences, Engineering and Technology
Acceso en línea:	https://www.intechopen.com/chapters/72216
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