ZnO Nanowire Field-Effect Transistor for Biosensing: A Review
The last 19 years have seen intense research made on zinc oxide (ZnO) material, mainly due to the ability of converting the natural n-type material into p-type. For a long time, the p-type state was impossible to attain and maintain. This chapter focuses on ways of improving the doped ZnO material w...
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| Main Author: | |
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| Format: | Book Chapter |
| Language: | English |
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IntechOpen
2020
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| Subjects: | |
| Online Access: | https://www.intechopen.com/chapters/73514 |
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| Summary: | The last 19 years have seen intense research made on zinc oxide (ZnO) material, mainly due to the ability of converting the natural n-type material into p-type. For a long time, the p-type state was impossible to attain and maintain. This chapter focuses on ways of improving the doped ZnO material which acts as a channel for nanowire field-effect transistor (NWFET) and biosensor. The biosensor has specific binding which is called functionalization that is achieved by attaching a variety of compounds on the designated sensing area. Reference electrodes and buffers are used as controllers. Top-down fabrication processes are preferred over bottom-up because they pave way for mass production. Different growth techniques are reviewed and discussed. Strengths and weaknesses of the FET and sensor are also reviewed. |
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| ISBN: | 978-1-83962-391-2 |
| DOI: | 10.5772/intechopen.93707 |