IMPATT Diodes Based on GaAs for Millimeter Wave Applications with Reference to Si

The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-wave window frequencies such as 94, 140, and 220 GHz are presented in this chapter. Both the DC and Small signal performance of the above-mentioned devices are investigated by using a small signal simulation tech...

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Autores principales:	Pradhan, Janmejaya, Pattanaik, Satya Ranjan
Formato:	Capítulo de libro
Lenguaje:	inglés
Publicado:	IntechOpen 2021
Materias:	Physical Sciences, Engineering and Technology
Acceso en línea:	https://www.intechopen.com/chapters/75773
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