Tip-Enhanced Raman Spectroscopy of 2D Semiconductors
Two-dimensional (2D) semiconductors are one of the most extensively studied modern materials showing potentials in large spectrum of applications from electronics/optoelectronics to photocatalysis and CO2 reduction. These materials possess astonishing optical, electronic, and mechanical properties,...
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
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IntechOpen
2021
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| Acceso en línea: | https://www.intechopen.com/chapters/78468 |
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| _version_ | 1879164747939577856 |
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| author | Rahaman, Mahfujur Zahn, Dietrich R.T. |
| author_browse | Rahaman, Mahfujur Zahn, Dietrich R.T. |
| author_facet | Rahaman, Mahfujur Zahn, Dietrich R.T. |
| author_sort | Rahaman, Mahfujur |
| building | IntechOpen |
| collection | Acceso abierto |
| description | Two-dimensional (2D) semiconductors are one of the most extensively studied modern materials showing potentials in large spectrum of applications from electronics/optoelectronics to photocatalysis and CO2 reduction. These materials possess astonishing optical, electronic, and mechanical properties, which are different from their bulk counterparts. Due to strong dielectric screening, local heterogeneities such as edges, grain boundaries, defects, strain, doping, chemical bonding, and molecular orientation dictate their physical properties to a great extent. Therefore, there is a growing demand of probing such heterogeneities and their effects on the physical properties of 2D semiconductors on site in a label-free and non-destructive way. Tip-enhanced Raman spectroscopy (TERS), which combines the merits of both scanning probe microscopy and Raman spectroscopy, has experienced tremendous progress since its introduction in the early 2000s and is capable of local spectroscopic investigation with (sub-) nanometer spatial resolution. Introducing this technique to 2D semiconductors not only enables us to understand the effects of local heterogeneities, it can also provide new insights opening the door for novel quantum mechanical applications. This book chapter sheds light on the recent progress of local spectroscopic investigation and chemical imaging of 2D semiconductors using TERS. It also provides a basic discussion of Raman selection rules of 2D semiconductors important to understand TERS results. Finally, a brief outlook regarding the potential of TERS in the field of 2D semiconductors is provided. |
| doi_str_mv | 10.5772/intechopen.99817 |
| first_indexed | 2026-10-15T21:39:15Z |
| format | Book Chapter |
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<dc:title>Tip-Enhanced Raman Spectroscopy of 2D Semiconductors</dc:title>
<dc:creator>Mahfujur Rahaman</dc:creator>
<dc:creator>Dietrich R.T. Zahn</dc:creator>
<dc:subject>Physical Sciences, Engineering and Technology</dc:subject>
<dc:description>Two-dimensional (2D) semiconductors are one of the most extensively studied modern materials showing potentials in large spectrum of applications from electronics/optoelectronics to photocatalysis and CO2 reduction. These materials possess astonishing optical, electronic, and mechanical properties, which are different from their bulk counterparts. Due to strong dielectric screening, local heterogeneities such as edges, grain boundaries, defects, strain, doping, chemical bonding, and molecular orientation dictate their physical properties to a great extent. Therefore, there is a growing demand of probing such heterogeneities and their effects on the physical properties of 2D semiconductors on site in a label-free and non-destructive way. Tip-enhanced Raman spectroscopy (TERS), which combines the merits of both scanning probe microscopy and Raman spectroscopy, has experienced tremendous progress since its introduction in the early 2000s and is capable of local spectroscopic investigation with (sub-) nanometer spatial resolution. Introducing this technique to 2D semiconductors not only enables us to understand the effects of local heterogeneities, it can also provide new insights opening the door for novel quantum mechanical applications. This book chapter sheds light on the recent progress of local spectroscopic investigation and chemical imaging of 2D semiconductors using TERS. It also provides a basic discussion of Raman selection rules of 2D semiconductors important to understand TERS results. Finally, a brief outlook regarding the potential of TERS in the field of 2D semiconductors is provided.</dc:description>
<dc:publisher>IntechOpen</dc:publisher>
<dc:date>2021-10-06</dc:date>
<dc:type>Chapter, Part Of Book</dc:type>
<dc:identifier>https://www.intechopen.com/chapters/78468</dc:identifier>
<dc:identifier>doi:10.5772/intechopen.99817</dc:identifier>
<dc:language>en</dc:language>
<dc:relation>ISBN:978-1-83968-229-2</dc:relation>
<dc:rights>https://creativecommons.org/licenses/by/3.0/</dc:rights>
<dc:source>https://www.intechopen.com/books/10644 ; Recent Developments in Atomic Force Microscopy and Raman Spectroscopy for Materials Characterization</dc:source>
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| id | intech-78468 |
| institution | IntechOpen |
| isbn | 978-1-83968-229-2 |
| language | English |
| last_indexed | 2026-10-15T21:39:15Z |
| publishDate | 2021 |
| publishDateRange | 2021 |
| publishDateSort | 2021 |
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| spelling | intech-784682021-10-06 Tip-Enhanced Raman Spectroscopy of 2D Semiconductors Mahfujur Rahaman Dietrich R.T. Zahn Physical Sciences, Engineering and Technology Two-dimensional (2D) semiconductors are one of the most extensively studied modern materials showing potentials in large spectrum of applications from electronics/optoelectronics to photocatalysis and CO2 reduction. These materials possess astonishing optical, electronic, and mechanical properties, which are different from their bulk counterparts. Due to strong dielectric screening, local heterogeneities such as edges, grain boundaries, defects, strain, doping, chemical bonding, and molecular orientation dictate their physical properties to a great extent. Therefore, there is a growing demand of probing such heterogeneities and their effects on the physical properties of 2D semiconductors on site in a label-free and non-destructive way. Tip-enhanced Raman spectroscopy (TERS), which combines the merits of both scanning probe microscopy and Raman spectroscopy, has experienced tremendous progress since its introduction in the early 2000s and is capable of local spectroscopic investigation with (sub-) nanometer spatial resolution. Introducing this technique to 2D semiconductors not only enables us to understand the effects of local heterogeneities, it can also provide new insights opening the door for novel quantum mechanical applications. This book chapter sheds light on the recent progress of local spectroscopic investigation and chemical imaging of 2D semiconductors using TERS. It also provides a basic discussion of Raman selection rules of 2D semiconductors important to understand TERS results. Finally, a brief outlook regarding the potential of TERS in the field of 2D semiconductors is provided. IntechOpen 2021-10-06 Chapter, Part Of Book https://www.intechopen.com/chapters/78468 doi:10.5772/intechopen.99817 en ISBN:978-1-83968-229-2 https://creativecommons.org/licenses/by/3.0/ https://www.intechopen.com/books/10644 ; Recent Developments in Atomic Force Microscopy and Raman Spectroscopy for Materials Characterization |
| spellingShingle | Physical Sciences, Engineering and Technology Rahaman, Mahfujur Zahn, Dietrich R.T. Tip-Enhanced Raman Spectroscopy of 2D Semiconductors |
| title | Tip-Enhanced Raman Spectroscopy of 2D Semiconductors |
| title_full | Tip-Enhanced Raman Spectroscopy of 2D Semiconductors |
| title_fullStr | Tip-Enhanced Raman Spectroscopy of 2D Semiconductors |
| title_full_unstemmed | Tip-Enhanced Raman Spectroscopy of 2D Semiconductors |
| title_short | Tip-Enhanced Raman Spectroscopy of 2D Semiconductors |
| title_sort | tip enhanced raman spectroscopy of 2d semiconductors |
| topic | Physical Sciences, Engineering and Technology |
| url | https://www.intechopen.com/chapters/78468 |
| work_keys_str_mv | AT rahamanmahfujur tipenhancedramanspectroscopyof2dsemiconductors AT zahndietrichrt tipenhancedramanspectroscopyof2dsemiconductors |