Structural Determinants for Ligand Accommodation in Voltage Sensors

After ligand binding, many ion channels undergo rearrangements at the voltage sensor domain (VSD) that often modulate their gating activity with important physiological repercussions. Since the VSD is dynamic, it is interesting to establish a correlation between the potential mobility of this elemen...

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Detalles Bibliográficos

Autores principales:	García-Morales, Abigail, López-Palestino, Aylin, Balleza, Daniel
Formato:	Capítulo de libro
Lenguaje:	inglés
Publicado:	IntechOpen 2022
Materias:	Health Sciences
Acceso en línea:	https://www.intechopen.com/chapters/80157
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!