Contribution to the Calculation of Physical Properties of BeSe Semiconductor
We expose various physical parameters of binary compound BeSe in the stable zinc blend and NiAs structures using the functional HSE hybrid, GGA-PBE, and LDA. We deduce elastic constants, mechanical parameters, and wave velocities according to different orientations. BeSe semiconductor has Γ-X (2.852...
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| Autores principales: | , |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2022
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/80825 |
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