Boron Doping in Next-Generation Materials for Semiconductor Device
The article surveys the most recent achievements starting with the boron doping mechanism, mainly focused on doping in semiconductor materials such as Si, Ge, graphene, carbon nanotube, or other 2D materials. Frequently used doping methodologies are discussed, including ion implantation and solid-ph...
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| Autores principales: | , , |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2022
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/83080 |
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