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Germanium on Silicon Avalanche Photodiode for High-Speed Fiber Communication

Silicon photonics is one of the promising technologies for high-speed optical fiber communications. Among various silicon photonic devices, germanium on silicon avalanche photodiode (Ge/Si APDs) received tremendous attentions because of its superior performance and integration compatibility. In 2016...

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Autores principales: Huang, Mengyuan, Magruder, Kelly, Malinge, Yann, Fakhimi, Parastou, Liao, Hao-Hsiang, Kohen, David, Lovell, Gregory, Qian, Wei, Lee, Kiyoung, Brandt, Carsten, Hakami, Mahtab, Chen, Yen-jung, Carabajal, Erin, Guillermo, Erle, Slavin, Seth, Liu, Ansheng
Formato: Capítulo de libro
Lenguaje:inglés
Publicado: IntechOpen 2022
Materias:
Physical Sciences, Engineering and Technology
Acceso en línea:https://www.intechopen.com/chapters/84567
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Sumario:Silicon photonics is one of the promising technologies for high-speed optical fiber communications. Among various silicon photonic devices, germanium on silicon avalanche photodiode (Ge/Si APDs) received tremendous attentions because of its superior performance and integration compatibility. In 2016, normal incidence Ge/Si APD demonstrated a NRZ 10−12 sensitivity of −23.5 dBm at 25 Gb/s; more recently, a waveguide-integrated Ge/Si APD receiver presents a 106Gb/s PAM4 sensitivity of −18.9 dBm. These results are best reported performance among all APD-based devices, and these breakthroughs are mainly benefited from Ge/Si APD’s structure and material characteristics. Ge/Si APD adopts a separated charge-absorption-multiplication (SCAM) structure with a pure Ge absorber and an intrinsic Si avalanche layer. Since, Si is one of well-known best avalanche materials with large gain-bandwidth products and low ionization noise ratio, which make Ge/Si APDs demonstrating superior performance at high data rates. Moreover, this Si-based device is manufactured by standard CMOS foundries and is process-compatible with other silicon photonic devices including silicon-based waveguides, demux, hybrid, etc. This advantage simplifies the assembly of photonic systems and makes a large-scale integrated silicon photonic chip possible, which provides compact solutions for high-density communication systems. In this chapter, we review recent progresses on Ge/Si APD structure design, material, and performance.
ISBN:978-1-83768-670-4
DOI:10.5772/intechopen.107971

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