Inertness and Other Properties of Thin Ruthenium Electrodes in ReRAM Applications

Building nonvolatile memory such as resistive random access memory (ReRAM) directly into a CMOS backend (BEOL) would reduce latency in connectivity-constrained devices and reduce chip’s footprint by stacking non-volatile memory (NVM) on top of the logic circuits. This co-integration is facilitated b...

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Detalles Bibliográficos

Autores principales:	Chakraborty, Amrita, Al-Mamun, Mohammad, Orlowski, Marius
Formato:	Capítulo de libro
Lenguaje:	inglés
Publicado:	IntechOpen 2023
Materias:	Physical Sciences, Engineering and Technology
Acceso en línea:	https://www.intechopen.com/chapters/86517
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!