From Challenges to Solutions, Heteroepitaxy of GaAs-Based Materials on Si for Si Photonics
Monolithic growth of III-V materials onto Si substrates is appealing for realizing practical on-chip light sources for Si-based photonic integrated circuits (PICs). Nevertheless, the material dissimilarities between III-V materials and Si substrates inevitably lead to the formation of crystalline de...
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| Autores principales: | , , , , , |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2023
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/88764 |
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| Sumario: | Monolithic growth of III-V materials onto Si substrates is appealing for realizing practical on-chip light sources for Si-based photonic integrated circuits (PICs). Nevertheless, the material dissimilarities between III-V materials and Si substrates inevitably lead to the formation of crystalline defects, including antiphase domains (APBs), threading dislocations (TDs), and micro-cracks. These nontrivial defects lead to impaired device performance and must be suppressed to a sufficiently low value before propagating into the active region. In this chapter, we review current approaches to control the formation of defects and achieve high-quality GaAs monolithically grown on Si substrates. An APB-free GaAs on complementary-metal-oxide semiconductor (CMOS)-compatible Si (001) substrates grown by molecular beam epitaxy (MBE) only and a low TD density GaAs buffer layer with strained-layer superlattice (SLS) and asymmetric step-graded (ASG) InGaAs layers are demonstrated. Furthermore, recent advances in InAs/GaAs quantum dot (QD) lasers as efficient on-chip light sources grown on the patterned Si substrates for PICs are outlined. |
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| ISBN: | 978-1-83769-135-7 |
| DOI: | 10.5772/intechopen.114062 |