Wide Band Gap Semiconductor Based Highpower ATT Diodes In The MM-wave and THz Regime: Device Reliability, Experimental Feasibility and Photo-sensitivity
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2010
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/9968 |
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