SiGe semiconductor electronic component: a review on fundamentals and applications
This review addresses the application of silicon-germanium (SiGe) semiconductors as electronic components, highlighting their enhanced electronic and physical properties compared to pure silicon semiconductors. SiGe Semiconductors are widely used in high-performance devices, such as heterojunction b...
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| Autores principales: | , , , , , |
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| Formato: | Artículo |
| Lenguaje: | inglés |
| Publicado: |
2024
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| Materias: | |
| Acceso en línea: | https://dialnet.unirioja.es/servlet/oaiart?codigo=10265500 |
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| Sumario: | This review addresses the application of silicon-germanium (SiGe) semiconductors as electronic components, highlighting their enhanced electronic and physical properties compared to pure silicon semiconductors. SiGe Semiconductors are widely used in high-performance devices, such as heterojunction bipolar transistors (HBTs) and radio-frequency integrated circuits (RFICs), due to their ability to improve speed, efficiency, and overall device performance. Incoporating Ge into Si increases electron mobility, enabling devices to operate at higher speeds and with lower power consumption, which is crucial for portable and low-power applications. Additionally, SiGe semiconductors are compatible with existing Si semiconductor manufacturing processes, facilitating their integration into complementary metal-oxide semiconductor (CMOS) technologies. Another significant benefit is their improved high-frequency performance, making them suitable for applications such as wireless communications and radar technologies. By varying the Ge composition in SiGe, it is possible to adjust the bandgap and lattice strain, providing flexibility in the design of electronic and optoelectronic devices. These attributes make SiGe semiconductors an ideal choice for a wide range of advanced applications where performance and energy efficiency are essential. |
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