New Analytical Potential, Charge, and Current Distributions in JL MOSFETs: Differences between Accurate and Simplified Models

<p id="p1">The operation of metal-oxide-semiconductor-field-effect transistors (MOSFETs) cannot be conceived without the prior formation of inversion layers. Charge, potential, and current distributions in this layer are important quantities for all types of MOSFET configurations. The mathematical d...

Descripción completa

Detalles Bibliográficos

Autor principal:	Pereyra, Pedro
Formato:	Capítulo de libro
Lenguaje:	inglés
Publicado:	IntechOpen 2024
Materias:	Physical Sciences, Engineering and Technology
Acceso en línea:	https://www.intechopen.com/chapters/1179882
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!