Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics
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Guardado en:
| Autor principal: | |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2011
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/15089 |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
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