InAs Quantum Dots of Engineered Height for Fabrication of Broadband Superluminescent Diodes
None
Guardado en:
| Autores principales: | , |
|---|---|
| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2012
|
| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/37465 |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares: InAs Quantum Dots of Engineered Height for Fabrication of Broadband Superluminescent Diodes
- InAs Quantum Dots in Symmetric InGaAs/GaAs Quantum Wells
- Capping of InAs/GaAs Quantum Dots for GaAs Based Lasers
- Advances in Colloidal Quantum Dot Laser Diodes
- Intersublevel Relaxation Properties of Self- Assembled InAs/GaAs Quantum Dot Heterostructures
- Molecular Beam Epitaxy of InAs Quantum Dots: From Growth Mechanisms to Structure-Property Engineering and Optoelectronic Applications
- Quantum Dot Light-Emitting Diode: Structure, Mechanism, and Preparation