Molecular Beam Epitaxy of InAs Quantum Dots: From Growth Mechanisms to Structure-Property Engineering and Optoelectronic Applications
<p>Self-assembled indium arsenide (InAs) quantum dots (QDs) have received great interest in the last few decades. These nanoscale structures are very attractive from both a technological and scientific point of view, driven by their nearly zero-dimensional systems where quantum effects become very s...
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| Autores principales: | , |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2026
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/1246246 |
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