Molecular Beam Epitaxy of InAs Quantum Dots: From Growth Mechanisms to Structure-Property Engineering and Optoelectronic Applications

<p>Self-assembled indium arsenide (InAs) quantum dots (QDs) have received great interest in the last few decades. These nanoscale structures are very attractive from both a technological and scientific point of view, driven by their nearly zero-dimensional systems where quantum effects become very s...

Descripción completa

Detalles Bibliográficos

Autores principales:	Salhi, Abdelmajid, Aissa, Brahim
Formato:	Capítulo de libro
Lenguaje:	inglés
Publicado:	IntechOpen 2026
Materias:	Physical Sciences, Engineering and Technology
Acceso en línea:	https://www.intechopen.com/chapters/1246246
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!