Molecular Beam Epitaxy of Si, Ge, and Sn and Their Compounds
In the past decade, the increasing need for high-performance micro- and nanoelectronics has driven the research on group IV heterostructure devices, which utilize quantum effects as dominant working principle. The compound semiconductor SiGeSn has presented itself as promising material system for gr...
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| Autores principales: | , , |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2023
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/88762 |
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