Molecular Beam Epitaxy of Si, Ge, and Sn and Their Compounds
In the past decade, the increasing need for high-performance micro- and nanoelectronics has driven the research on group IV heterostructure devices, which utilize quantum effects as dominant working principle. The compound semiconductor SiGeSn has presented itself as promising material system for gr...
Guardado en:
| Autores principales: | , , |
|---|---|
| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2023
|
| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/88762 |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares: Molecular Beam Epitaxy of Si, Ge, and Sn and Their Compounds
- Molecular Beam Epitaxy: Principals, Advantages and Challenges
- Molecular Beam Epitaxy Growth of Nanowires in the Hg1-xCdxTe Material System
- Self-Assembled InAs(N) Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (100)*
- Heterostructured III-V Nanowires with Mixed Crystal Phases Grown by Au-Assisted Molecular Beam Epitaxy
- Molecular Beam Epitaxy of InAs Quantum Dots: From Growth Mechanisms to Structure-Property Engineering and Optoelectronic Applications
- Metastable Solvent Epitaxy of SiC, the Other Diamond Synthetics