Metal Gate Electrode and High-Dielectrics for Sub-32nm Bulk CMOS Technology: Integrating Lanthanum Oxide Capping Layer for Low Threshold-Voltage Devices Application
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Guardado en:
| Autor principal: | |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2010
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/6495 |
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