Nanostructured Silicon Sensors
Nanostructure porous silicon layers with systematically varied pore size of 8–70 nm were fabricated onto the p-type c-Si wafers using electrochemical anodizing method from HF + ethanol and HF + ethanol + CdCl2 solutions (hereafter PS and PSCD, respectively). Gas and photo sensors based on c-Si/PS (o...
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2020
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/68321 |
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