Nanostructured Silicon Sensors
Nanostructure porous silicon layers with systematically varied pore size of 8–70 nm were fabricated onto the p-type c-Si wafers using electrochemical anodizing method from HF + ethanol and HF + ethanol + CdCl2 solutions (hereafter PS and PSCD, respectively). Gas and photo sensors based on c-Si/PS (o...
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| Autor principal: | |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2020
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| Acceso en línea: | https://www.intechopen.com/chapters/68321 |
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| Sumario: | Nanostructure porous silicon layers with systematically varied pore size of 8–70 nm were fabricated onto the p-type c-Si wafers using electrochemical anodizing method from HF + ethanol and HF + ethanol + CdCl2 solutions (hereafter PS and PSCD, respectively). Gas and photo sensors based on c-Si/PS (or PSCD)/CdS and c-Si/PS/Cd0.4Zn0.6O heterojunctions were synthesized by depositing CdS and Cd0.4Zn0.6O films onto the c-Si/PS (or PSCD) substrates by electrochemical deposition (ED hereafter). The morphology of the PS and PSCD layers, CdS, and Cd0.4Zn0.6O films was studied using scanning electron microscopy (SEM). Gas- and photosensitivity properties of heterojunctions were studied as a function of pore size. The optimal pore size is determined, which provides the maximum gas- and photosensitivity of heterojunctions in this study. It was established that the heterojunctions based on PSCD possess higher gas- and photosensitivity than heterojunctions based on PS. |
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| ISBN: | 978-1-78985-437-4 |
| DOI: | 10.5772/intechopen.88316 |