Electric Field-Induced Magnetization Reversal of Multiferroic Nanomagnet
Using the inverse piezoelectric effect and inverse magnetostrictive effect in a multiferroic heterojunction, an electric field is able to control the magnetization switching of a uniaxial nanomagnet. Compared with traditional spintronic devices based on magnetic field, multiferroic nanomagnet device...
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| Autores principales: | , |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2021
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/71046 |
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| Sumario: | Using the inverse piezoelectric effect and inverse magnetostrictive effect in a multiferroic heterojunction, an electric field is able to control the magnetization switching of a uniaxial nanomagnet. Compared with traditional spintronic devices based on magnetic field, multiferroic nanomagnet devices have the advantages of ultra-low consumption and high radiation resistance, showing great application potential in modern high-integrated circuits and military electronic systems. However, the difficulties of electric field control of complete magnetization reversal of the nanomagnet and nanomagnet arrays in a nanomagnetic logic gate still restrict the developments of multiferroic nanomagnet device. In this chapter, the uniaxial nanomagnets in multiferroic heterojunctions are mainly discussed. The two core problems of the electric field control of nanomagnets and nanomagnetic logic gate are well solved. |
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| ISBN: | 978-1-83962-160-4 |
| DOI: | 10.5772/intechopen.91231 |