Electric Field-Induced Magnetization Reversal of Multiferroic Nanomagnet
Using the inverse piezoelectric effect and inverse magnetostrictive effect in a multiferroic heterojunction, an electric field is able to control the magnetization switching of a uniaxial nanomagnet. Compared with traditional spintronic devices based on magnetic field, multiferroic nanomagnet device...
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| Autores principales: | , |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
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IntechOpen
2021
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| Acceso en línea: | https://www.intechopen.com/chapters/71046 |
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| _version_ | 1879164703678136320 |
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| author | Liu, Jiahao Fang, Liang |
| author_browse | Fang, Liang Liu, Jiahao |
| author_facet | Liu, Jiahao Fang, Liang |
| author_sort | Liu, Jiahao |
| building | IntechOpen |
| collection | Acceso abierto |
| description | Using the inverse piezoelectric effect and inverse magnetostrictive effect in a multiferroic heterojunction, an electric field is able to control the magnetization switching of a uniaxial nanomagnet. Compared with traditional spintronic devices based on magnetic field, multiferroic nanomagnet devices have the advantages of ultra-low consumption and high radiation resistance, showing great application potential in modern high-integrated circuits and military electronic systems. However, the difficulties of electric field control of complete magnetization reversal of the nanomagnet and nanomagnet arrays in a nanomagnetic logic gate still restrict the developments of multiferroic nanomagnet device. In this chapter, the uniaxial nanomagnets in multiferroic heterojunctions are mainly discussed. The two core problems of the electric field control of nanomagnets and nanomagnetic logic gate are well solved. |
| doi_str_mv | 10.5772/intechopen.91231 |
| first_indexed | 2026-10-15T21:38:33Z |
| format | Book Chapter |
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<dc:title>Electric Field-Induced Magnetization Reversal of Multiferroic Nanomagnet</dc:title>
<dc:creator>Jiahao Liu</dc:creator>
<dc:creator>Liang Fang</dc:creator>
<dc:subject>Physical Sciences, Engineering and Technology</dc:subject>
<dc:description>Using the inverse piezoelectric effect and inverse magnetostrictive effect in a multiferroic heterojunction, an electric field is able to control the magnetization switching of a uniaxial nanomagnet. Compared with traditional spintronic devices based on magnetic field, multiferroic nanomagnet devices have the advantages of ultra-low consumption and high radiation resistance, showing great application potential in modern high-integrated circuits and military electronic systems. However, the difficulties of electric field control of complete magnetization reversal of the nanomagnet and nanomagnet arrays in a nanomagnetic logic gate still restrict the developments of multiferroic nanomagnet device. In this chapter, the uniaxial nanomagnets in multiferroic heterojunctions are mainly discussed. The two core problems of the electric field control of nanomagnets and nanomagnetic logic gate are well solved.</dc:description>
<dc:publisher>IntechOpen</dc:publisher>
<dc:date>2021-03-24</dc:date>
<dc:type>Chapter, Part Of Book</dc:type>
<dc:identifier>https://www.intechopen.com/chapters/71046</dc:identifier>
<dc:identifier>doi:10.5772/intechopen.91231</dc:identifier>
<dc:language>en</dc:language>
<dc:relation>ISBN:978-1-83962-160-4</dc:relation>
<dc:rights>https://creativecommons.org/licenses/by/3.0/</dc:rights>
<dc:source>https://www.intechopen.com/books/8773 ; Magnetic Materials and Magnetic Levitation</dc:source>
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| id | intech-71046 |
| institution | IntechOpen |
| isbn | 978-1-83962-160-4 |
| language | English |
| last_indexed | 2026-10-15T21:38:33Z |
| publishDate | 2021 |
| publishDateRange | 2021 |
| publishDateSort | 2021 |
| publisher | IntechOpen |
| publisherStr | IntechOpen |
| record_format | oai_dc |
| spelling | intech-710462021-03-24 Electric Field-Induced Magnetization Reversal of Multiferroic Nanomagnet Jiahao Liu Liang Fang Physical Sciences, Engineering and Technology Using the inverse piezoelectric effect and inverse magnetostrictive effect in a multiferroic heterojunction, an electric field is able to control the magnetization switching of a uniaxial nanomagnet. Compared with traditional spintronic devices based on magnetic field, multiferroic nanomagnet devices have the advantages of ultra-low consumption and high radiation resistance, showing great application potential in modern high-integrated circuits and military electronic systems. However, the difficulties of electric field control of complete magnetization reversal of the nanomagnet and nanomagnet arrays in a nanomagnetic logic gate still restrict the developments of multiferroic nanomagnet device. In this chapter, the uniaxial nanomagnets in multiferroic heterojunctions are mainly discussed. The two core problems of the electric field control of nanomagnets and nanomagnetic logic gate are well solved. IntechOpen 2021-03-24 Chapter, Part Of Book https://www.intechopen.com/chapters/71046 doi:10.5772/intechopen.91231 en ISBN:978-1-83962-160-4 https://creativecommons.org/licenses/by/3.0/ https://www.intechopen.com/books/8773 ; Magnetic Materials and Magnetic Levitation |
| spellingShingle | Physical Sciences, Engineering and Technology Liu, Jiahao Fang, Liang Electric Field-Induced Magnetization Reversal of Multiferroic Nanomagnet |
| title | Electric Field-Induced Magnetization Reversal of Multiferroic Nanomagnet |
| title_full | Electric Field-Induced Magnetization Reversal of Multiferroic Nanomagnet |
| title_fullStr | Electric Field-Induced Magnetization Reversal of Multiferroic Nanomagnet |
| title_full_unstemmed | Electric Field-Induced Magnetization Reversal of Multiferroic Nanomagnet |
| title_short | Electric Field-Induced Magnetization Reversal of Multiferroic Nanomagnet |
| title_sort | electric field induced magnetization reversal of multiferroic nanomagnet |
| topic | Physical Sciences, Engineering and Technology |
| url | https://www.intechopen.com/chapters/71046 |
| work_keys_str_mv | AT liujiahao electricfieldinducedmagnetizationreversalofmultiferroicnanomagnet AT fangliang electricfieldinducedmagnetizationreversalofmultiferroicnanomagnet |