Area-Efficient Spin-Orbit Torque Magnetic Random-Access Memory
<p id="p1">Spin-orbit torque magnetic random-access memory (SOT-MRAM) has shown promising potential to realize reliable, high-speed and energy-efficient on-chip memory. However, conventional SOT-MRAM requires two access transistors per cell. This limits the use of conventional SOT-MRAM in high-densi...
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2020
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/71788 |
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