Area-Efficient Spin-Orbit Torque Magnetic Random-Access Memory

<p id="p1">Spin-orbit torque magnetic random-access memory (SOT-MRAM) has shown promising potential to realize reliable, high-speed and energy-efficient on-chip memory. However, conventional SOT-MRAM requires two access transistors per cell. This limits the use of conventional SOT-MRAM in high-densi...

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Bibliographic Details

Main Author:	Ali, Karim
Format:	Book Chapter
Language:	English
Published:	IntechOpen 2020
Subjects:	Physical Sciences, Engineering and Technology
Online Access:	https://www.intechopen.com/chapters/71788
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