Interactions between Terrestrial Cosmic-Ray Neutrons and III–V Compound Semiconductors

This work explores by numerical simulation the impact of high-energy atmospheric neutrons and their interactions with III–V binary compound semiconductors. The efforts have focused on eight III–V semiconductors: GaAs, AlAs, InP, InAs, GaSb, InSb, GaN, and GaP. For each material, extensive Geant4 num...

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Detalles Bibliográficos

Autores principales:	Munteanu, Daniela, Autran, Jean-Luc
Formato:	Capítulo de libro
Lenguaje:	inglés
Publicado:	IntechOpen 2020
Materias:	Physical Sciences, Engineering and Technology
Acceso en línea:	https://www.intechopen.com/chapters/72532
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