Radiation Response of Group-IV and III-V Semiconductors Subjected to D–D and D–T Fusion Neutrons
This work focuses on the radiation response of Group IV (Si, Ge, SiC, diamond) and III-V (GaAs, GaN, GaP, GaSb, InAs, InP, InSb, AlAs) semiconductors subjected to D–D (2.45 MeV) and D–T (14 MeV) neutrons. The response of each material has been systematically investigated through a direct calculation...
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| Autores principales: | , |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2022
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/81339 |
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