Radiation Response of Group-IV and III-V Semiconductors Subjected to D–D and D–T Fusion Neutrons
This work focuses on the radiation response of Group IV (Si, Ge, SiC, diamond) and III-V (GaAs, GaN, GaP, GaSb, InAs, InP, InSb, AlAs) semiconductors subjected to D–D (2.45 MeV) and D–T (14 MeV) neutrons. The response of each material has been systematically investigated through a direct calculation...
Guardado en:
| Autores principales: | , |
|---|---|
| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2022
|
| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/81339 |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares: Radiation Response of Group-IV and III-V Semiconductors Subjected to D–D and D–T Fusion Neutrons
- Interactions between Terrestrial Cosmic-Ray Neutrons and III–V Compound Semiconductors
- Modeling of Diffusion-Collection Mechanisms in Semiconductor Devices Submitted to Ionizing Radiation
- 3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation
- A 2-D/3-D Schrödinger-Poisson Drift-Diffusion Numerical Simulation of Radially-Symmetric Nanowire MOSFETs
- Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation
- Low-Dimensional Group III-V Compound Semiconductor Structures