Measuring the Blind Holes: Three-Dimensional Imaging of through Silicon via Using High Aspect Ratio AFM Probe

Three-dimensional integration and stacking of semiconductor devices with high density, its compactness, miniaturization and vertical 3D stacking of nanoscale devices highlighted many challenging problems in the 3D parameter’s such as CD (critical dimension) measurement, depth measurement of via hole...

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Autores principales:	Akhtar, Imtisal, Rehman, Malik Abdul, Seo, Yongho
Formato:	Capítulo de libro
Lenguaje:	inglés
Publicado:	IntechOpen 2020
Materias:	Physical Sciences, Engineering and Technology
Acceso en línea:	https://www.intechopen.com/chapters/72942
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