Measuring the Blind Holes: Three-Dimensional Imaging of through Silicon via Using High Aspect Ratio AFM Probe
Three-dimensional integration and stacking of semiconductor devices with high density, its compactness, miniaturization and vertical 3D stacking of nanoscale devices highlighted many challenging problems in the 3D parameter’s such as CD (critical dimension) measurement, depth measurement of via hole...
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| Autores principales: | , , |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2020
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/72942 |
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