Gate-All-Around FETs: Nanowire and Nanosheet Structure
DC/AC performances of 3-nm-node gate-all-around (GAA) FETs having different widths and the number of channels (Nch) from 1 to 5 were investigated thoroughly using fully-calibrated TCAD. There are two types of GAAFETs: nanowire (NW) FETs having the same width (WNW) and thickness of the channels, and...
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| Main Authors: | , , , , |
|---|---|
| Format: | Book Chapter |
| Language: | English |
| Published: |
IntechOpen
2020
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| Subjects: | |
| Online Access: | https://www.intechopen.com/chapters/73506 |
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