Gate-All-Around FETs: Nanowire and Nanosheet Structure

DC/AC performances of 3-nm-node gate-all-around (GAA) FETs having different widths and the number of channels (Nch) from 1 to 5 were investigated thoroughly using fully-calibrated TCAD. There are two types of GAAFETs: nanowire (NW) FETs having the same width (WNW) and thickness of the channels, and...

Descripción completa

Detalles Bibliográficos

Autores principales:	Yoon, Jun-Sik, Jeong, Jinsu, Lee, Seunghwan, Lee, Junjong, Baek, Rock-Hyun
Formato:	Capítulo de libro
Lenguaje:	inglés
Publicado:	IntechOpen 2020
Materias:	Physical Sciences, Engineering and Technology
Acceso en línea:	https://www.intechopen.com/chapters/73506
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!