In Situ TEM Studies of III-V Nanowire Growth Mechanism
Growing nanowires inside a transmission electron microscope (TEM) and observing the process in situ has contributed immensely to understanding nanowire growth mechanisms. Majority of such studies were on elemental semiconductors – either Si or Ge – both of which are indirect bandgap semiconductors....
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
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IntechOpen
2021
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/74814 |
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