In Situ TEM Studies of III-V Nanowire Growth Mechanism

Growing nanowires inside a transmission electron microscope (TEM) and observing the process in situ has contributed immensely to understanding nanowire growth mechanisms. Majority of such studies were on elemental semiconductors – either Si or Ge – both of which are indirect bandgap semiconductors....

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Detalles Bibliográficos

Autor principal:	Maliakkal, Carina B.
Formato:	Capítulo de libro
Lenguaje:	inglés
Publicado:	IntechOpen 2021
Materias:	Physical Sciences, Engineering and Technology
Acceso en línea:	https://www.intechopen.com/chapters/74814
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!