Molecular Beam Epitaxy Growth of Nanowires in the Hg1-xCdxTe Material System
None
Guardado en:
| Autores principales: | , |
|---|---|
| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2010
|
| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/10517 |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares: Molecular Beam Epitaxy Growth of Nanowires in the Hg1-xCdxTe Material System
- Semiconductor Epitaxial Crystal Growth: Silicon Nanowires
- Heterostructured III-V Nanowires with Mixed Crystal Phases Grown by Au-Assisted Molecular Beam Epitaxy
- Molecular Beam Epitaxy: Principals, Advantages and Challenges
- Molecular Beam Epitaxy of Si, Ge, and Sn and Their Compounds
- Molecular Beam Epitaxy of InAs Quantum Dots: From Growth Mechanisms to Structure-Property Engineering and Optoelectronic Applications
- Adaptive second-order Crank-Nicolson time-stepping schemes for time fractional molecular beam epitaxial growth models