A Compact Model of DMG-GC-DOTTDCD Cylindrical Gate MOSFET

<p id="p1">A comprehensive analysis of the surface potential, threshold voltage, and subthreshold swing (SS) for dual-metal gate graded channel and dual oxide thickness with two different dielectric constants cylindrical gate (DMG-GC-DOTTDCD) metal-oxide-semiconductor field-effect transistors (MOSFE...

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Bibliographic Details

Main Authors:	Jaafar, Hind, Aouaj, Abdellah, Bouziane, Ahmed, Iñiguez, Benjamin
Format:	Book Chapter
Language:	English
Published:	IntechOpen 2024
Subjects:	Physical Sciences, Engineering and Technology
Online Access:	https://www.intechopen.com/chapters/1179645
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