Perspective Chapter: Investigation of Heat Transport inside MESFET and MOSFET Nanodevices Based on the Mesoscale Method
<p>The transistor is the backbone of semiconductor electronics today. Among the transistor devices used are the metal-semiconductor field-effect transistor (MESFET) and the metal-oxide-semiconductor field-effect transistor (MOSFET). As the size of the devices decreases on the nanoscale, the heat gen...
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2026
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/1236310 |
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| Sumario: | <p>The transistor is the backbone of semiconductor electronics today. Among the transistor devices used are the metal-semiconductor field-effect transistor (MESFET) and the metal-oxide-semiconductor field-effect transistor (MOSFET). As the size of the devices decreases on the nanoscale, the heat generated affects the performance of the device. In this chapter, the heat transfer inside the devices was studied using the lattice Boltzmann method (LBM) with the effect of the specularity parameter (<em><italic xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">p</italic></em>), which influences the thermal conductivity of the device, and a change in the metal semiconductor (MES) device substrate, where silicon, silicon oxide, and gallium arsenide were used. Results showed that the device based on a silicon (Si) substrate experiences lower temperatures than the device based on silicon oxide (SiO<sub>2</sub>) and gallium arsenide (GaAs), where increasing the specularity parameter has a positive effect on reducing the temperature of electronic devices. It was observed that the MESFET nanotransistor manufactured on a silicon substrate is more stable than those made with other materials, with an estimated temperature of 305 K, followed by GaAs at 307.4 K, and then SiO<sub>2</sub> at 310.6 K. Meanwhile, the silicon carbide-based (SiC) MOSFET device is less hot than the silicon-based device. The temperature for the silicon device is estimated to be 325 K, while for the SiC device, it is approximately 305 K.</p> |
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| ISBN: | 978-1-80631-121-7 |
| DOI: | 10.5772/intechopen.1012207 |