Noise Analysis in Nanostructured Tunnel Field Devices
Tunnel Field Effect Transistors (TFETs) have appeared as an alternative candidate of “beyond CMOS” due to their advantages like very low leakage current and steep sub-threshold slope i.e. <60 mV/dec., etc. From past decades, researchers explored TFETs in terms of high ON current and steep subthre...
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| Autores principales: | , |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2021
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/79186 |
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