Noise Analysis in Nanostructured Tunnel Field Devices

Tunnel Field Effect Transistors (TFETs) have appeared as an alternative candidate of “beyond CMOS” due to their advantages like very low leakage current and steep sub-threshold slope i.e. <60 mV/dec., etc. From past decades, researchers explored TFETs in terms of high ON current and steep subthre...

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Detalles Bibliográficos

Autores principales:	Chander, Sweta, Sinha, Sanjeet Kumar
Formato:	Capítulo de libro
Lenguaje:	inglés
Publicado:	IntechOpen 2021
Materias:	Physical Sciences, Engineering and Technology
Acceso en línea:	https://www.intechopen.com/chapters/79186
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