Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy
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| Autores principales: | , , , , |
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| Formato: | Capítulo de libro |
| Lenguaje: | inglés |
| Publicado: |
IntechOpen
2011
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| Materias: | |
| Acceso en línea: | https://www.intechopen.com/chapters/22578 |
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